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| VISHAY TSML1000/1020/1030/1040 Vishay Semiconductors Extented Power IR Emitting Diode in SMD Package Description TSML1000 series are high efficiency infrared emitting diodes in GaAlAs on GaAs technology molded in clear SMD package. This technology represents best performance for radiant power under pulse conditions, forward voltage and reliability. TSML1000 TSML1020 TSML1030 Features * * * * * * * * Outstanding high radiant power Low forward voltage Suitable for high pulse current operation Angle of half intensity = 12 Peak wavelength p = 950 nm High reliability Matched Phototransistor series: TEMT1000 Versatile terminal configurations TSML1040 16852 Applications For remote control Photointerrupters Punched tape readers Encoder Absolute Maximum Ratings Tamb = 25 C, unless otherwise specified Parameter Reverse Voltage Forward Current Peak Forward Current Surge Forward Current Power Dissipation Junction Temperature Operating Temperature Range Storage Temperature Range Soldering Temperature Thermal Resistance Junction/Ambient t 5sec tp/T = 0.5, tp = 100 s tp = 100 s Test condition Symbol VR IF IFM IFSM PV Tj Tamb Tstg Tsd RthJA Value 5 100 200 1.0 190 100 - 40 to + 85 - 40 to + 100 <260 400 Unit V mA mA A mW C C C C C Basic Characteristics Tamb = 25 C, unless otherwise specified Tamb = 25 C, unless otherwise specified Parameter Forward Voltage Temp. Coefficient of VF Reverse Current Junction Capacitance Radiant Intensity Test condition IF = 20 mA, tp = 20 ms IF = 1 A, tp = 100 s IF = 1 mA VR = 5 V VR = 0 V, f = 1 MHz, E = 0 IF = 20 mA, tp = 20 ms Symbol VF VF TKVF IR Cj Ie 3 25 7 Min Typ. 1.2 2.6 - 1.85 10 Max 1.5 Unit V V mV/K A pF mW/sr Document Number 81033 Rev. 6, 21-May-03 www.vishay.com 1 TSML1000/1020/1030/1040 Vishay Semiconductors Parameter Radiant Power Temp. Coefficient of e Angle of Half Intensity Peak Wavelength Spectral Bandwidth Temp. Coefficient of p Rise Time Fall Time IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA IF = 100 mA Test condition IF = 100 mA, tp = 20 ms IF = 20 mA Symbol e TKe p TKp tr tf Min Typ. 35 - 0.6 12 950 50 0.2 800 800 Max VISHAY Unit mW %/K deg nm nm nm/K ns ns Typical Characteristics (Tamb = 25 C unless otherwise specified) 200 PV - Power Dissipation ( mW ) 10000 I F - Forward Current ( mA ) 180 160 140 120 100 80 60 40 20 0 0 10 20 30 40 50 60 70 80 90 100 T amb - Ambient Temperature ( C ) 0.1 1000 0.2 100 0.5 1.0 0.05 0.02 tp / T = 0.01 10 0.01 14335 0.10 1.00 10.00 100.00 16187 t p - Pulse Duration ( ms ) Figure 1. Power Dissipation vs. Ambient Temperature Figure 3. Pulse Forward Current vs. Pulse Duration 10 4 120 100 80 60 40 20 0 16188 I F - Forward Current ( mA ) I F - Forward Current ( mA ) 10 3 10 2 t p = 100 s tp / T = 0.001 10 1 10 0 0 10 20 30 40 50 60 70 80 90 100 13600 0 1 2 3 4 T amb - Ambient Temperature ( C ) V F - Forward Voltage ( V ) Figure 2. Forward Current vs. Ambient Temperature Figure 4. Forward Current vs. Forward Voltage www.vishay.com 2 Document Number 81033 Rev. 6, 21-May-03 VISHAY TSML1000/1020/1030/1040 Vishay Semiconductors 1.6 1.2 V Frel - Relative Forward Voltage 1.1 I e rel , e rel I F = 10 mA 1.0 0.9 1.2 I F = 20 mA 0.8 0.8 0.7 0 20 40 60 80 100 0.4 0 -10 0 10 94 7993 e 50 100 140 94 7990 e T amb - Ambient Temperature ( C ) T amb - Ambient Temperature ( C ) Figure 5. Relative Forward Voltage vs. Ambient Temperature Figure 8. Rel. Radiant Intensity/Power vs. Ambient Temperature 1000 e rel - Relative Radiant Power I e - Radiant Intensity ( mW/sr ) 1.25 1.0 100 0.75 0.5 10 1 0.25 I F = 100 mA 0 900 950 - Wavelength ( nm ) 1000 0.1 10 0 16189 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 94 7994 e Figure 6. Radiant Intensity vs. Forward Current Figure 9. Relative Radiant Power vs. Wavelength 1000 e - Radiant Power ( mW ) Srel - Relative Sensitivity 0 10 20 30 100 1.0 0.9 0.8 0.7 40 50 60 70 80 10 1 0.1 10 0 13602 10 1 10 2 10 3 I F - Forward Current ( mA ) 10 4 94 8243 0.6 0.4 0.2 0 0.2 0.4 0.6 Figure 7. Radiant Power vs. Forward Current Figure 10. Relative Radiant Sensitivity vs. Angular Displacement Document Number 81033 Rev. 6, 21-May-03 www.vishay.com 3 TSML1000/1020/1030/1040 Vishay Semiconductors Package Dimensions in mm TSML1000 VISHAY 16159 Package Dimensions in mm TSML1020 16160 www.vishay.com 4 Document Number 81033 Rev. 6, 21-May-03 VISHAY Package Dimensions in mm TSML1030 TSML1000/1020/1030/1040 Vishay Semiconductors 16228 Package Dimensions in mm TSML1040 16760 Document Number 81033 Rev. 6, 21-May-03 www.vishay.com 5 TSML1000/1020/1030/1040 Vishay Semiconductors Reel Dimensions VISHAY 18033 www.vishay.com 6 Document Number 81033 Rev. 6, 21-May-03 VISHAY Taping TSML1000 TSML1000/1020/1030/1040 Vishay Semiconductors 18030 Taping TSML1020 18031 Document Number 81033 Rev. 6, 21-May-03 www.vishay.com 7 TSML1000/1020/1030/1040 Vishay Semiconductors Taping TSML1030 VISHAY 18032 Precautions For Use 1. Over-current-proof Customer must apply resistors for protection, otherwise slight voltage shift will cause big current change (Burn out will happen). 2. Storage 2.1 Storage temperature and rel. humidity conditions are: 5C to 35C, R.H. 60% 2.2 Floor life must not exceed 168 h, acc. to JEDEC level 3, J-STD-020. Once the package is opened, the products should be used within a week. Otherwise, they should be kept in a damp proof box with desiccant. Considering tape life, we suggest to use products within one year from production date. 2.3 If opened more than one week in an atmosphere 5C to 35C, R.H. 60%, devices should be treated at 60C 5C for 15 hrs. 2.4 If humidity indicator in the package shows pink color (normal blue), then devices should be treated with the same conditions as 2.3 Reflow Solder Profile 260 240 220 Temperature ( C ) 200 180 160 140 120 100 80 60 0 + 5 C/s - 5 C/s 60 s to 120 s 5s 20 40 60 80 100 120 140 160 180 200 220 Time ( s ) 17172 www.vishay.com 8 Document Number 81033 Rev. 6, 21-May-03 VISHAY TSML1000/1020/1030/1040 Vishay Semiconductors Ozone Depleting Substances Policy Statement It is the policy of Vishay Semiconductor GmbH to 1. Meet all present and future national and international statutory requirements. 2. Regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (ODSs). The Montreal Protocol (1987) and its London Amendments (1990) intend to severely restrict the use of ODSs and forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban on these substances. Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of ODSs listed in the following documents. 1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively 2. Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental Protection Agency (EPA) in the USA 3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C (transitional substances) respectively. Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. We reserve the right to make changes to improve technical design and may do so without further notice. Parameters can vary in different applications. All operating parameters must be validated for each customer application by the customer. Should the buyer use Vishay Semiconductors products for any unintended or unauthorized application, the buyer shall indemnify Vishay Semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany Telephone: 49 (0)7131 67 2831, Fax number: 49 (0)7131 67 2423 Document Number 81033 Rev. 6, 21-May-03 www.vishay.com 9 This datasheet has been download from: www..com Datasheets for electronics components. |
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